GTRB264318FC-V1

High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz

The GTRB264318FC is a 400-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRB264318FC-V1
Description
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz
Min Frequency (MHz)
2500
Max Frequency(MHz)
2700
P3dB Output Power(W)
400
Gain(dB)
14.0
Efficiency(%)
50
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Broadband internal matching
  • Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2675 MHz, 48 V, Doherty fixture
  • Gain = 15 dB @ 47.2 dBm
  • Efficiency = 53% @ 47.2 dBm
  • Output power at P3dB = 400 W
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • GaN-on-SiC HEMT technology

Technical Resources

Datasheet


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GTRB264318FC-V1
400W,48V,2500-2700MHz,GaN HEMT